- 半導(dǎo)體制造技術(shù)導(dǎo)論
- (美)Hong Xiao(蕭宏)
- 226字
- 2018-12-26 21:44:53
1.4 參考文獻(xiàn)
[1] J. Bardeen and W. H. Brattain,The Transistor,A Semiconductor Triode,Physics Review,Vol. 74,pp. 435(1948)
[2] W. Shockley,The Theory of p-n Junctions in Semiconductor and p-n Junction Transistors,Bell Cyst. Tech. J.,Vol. 28,pp. 435(1949)
[3] Jack S. Kilby,Miniaturized electronic circuit,US patent #3,138,743,filed February 6,1959,granted June 23,1964.
[4] Robert N. Noyce,Semiconductor device-and-lead structure,US patent # 2,981,877,filed July 30,1959,granted April 25,1961.
[5] ULSI Technologies,C. Y. Chang and S.M. Sze,McGraw-Hill companies,New York,1996.
[6] Principles of CMOS VLSI Design,second edition,Neil H. E. Weste and Kamran Eshraghian,Addison-Weslay Publishing Company,Reading,Massachusetts,1993.
[7] Gordon E. Moore,Cramming more components onto integrated circuits,Electronics Magazine,Vol. 38,pp. 4,(1965). ftp://download.intel.com/museum/Moores_Law/Articles-Press_Releases/Gordon_Moore_1965_Article.pdf
[8] Michael Riordan and Lillian Hoddeson,Crystal Fire,W. W. Norton & Company,New York,1997.
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